description RT2C00M is a composite transistor built with two 2sc3052 chips in sc-88 package. feature ?? silicon np n epitaxial type each transistor elements are independent. ?? mini package for easy mounting application for low frequency amplify application RT2C00M composite transistor for low frequency amplify application silicon npn epitaxial type outline drawing unit:mm maximum ratings ?i ta=25 ???j ?i tr1 ?a tr2 ?j symbol parameter ratings unit v cbo collector to base voltage 50 v v ebo emitter to base voltage 6 v v ceo collector to emitter voltage 50 v i c collector current 200 ma p c collector dissipation ?i total ta=25 ???j 150 mw t j junction temperature ?{ 125 ?? t stg storage temperature -55 ?`?{ 125 ?? terminal connector ?@ ?f base ?p ?a ?f emitter ?i common ?j ?b ?f base ?q ?c ?f collector ?q ?d ?f collector ?p jeita ?f?| jedec ?f?| tr2 tr1 ?@ ?a ?b ?c ?d 0 ?` 0.1 0.65 0.9 1.25 2.1 0.65 0.65 2.0 0.2 0.13 ?@ ?a ?b ?d ?c isahaya electronics corporation marking l e ?@ ?a ?b ?d ?c type hfe item
RT2C00M composite transistor for low frequency amplify application silicon npn epitaxial type item e f g hfe 150?`300 250?`500 400?`800 marking le lf lg electrical characteristics ?i ta=25 ???j ?i tr1 ?a tr2 ?j limits symbol parameter test conditions min typ max unit v (br)ceo collector to emitter break down voltage i c =100 ? a ?c r be = ?? 50 - - v i cbo collector cut off current v cb = 5 0v ?c i e =0 ma - - 0.1 ? a i ebo emitter cut off current v eb =6v ?c i c =0 ma - - 0.1 ? a h fe * dc forward current gain v ce =6v ?c i c =-1ma 150 - 800 - h fe dc forward current gain v ce =6v ?c i c = 0. 1ma 90 - - - v ce(sat) collector to emitter saturation voltage i c =10 0 ma ?c i b =10ma - - 0.3 v f t gain band width product v ce =6v ?c i e =10ma - 200 - mhz cob collector output capacitance v cb =6v ?c i e =0ma ?c f=1mhz - 2.5 - pf nf noise figure v ce =6v ?c i e = - 0 .1 ma ?c f=1 00 hz ?c r g =2k ?? - - 15 db * : it shows h fe classification in right table. isahaya electronics corporation
RT2C00M composite transistor for low frequency amplify application silicon npn epitaxial type common emitter output ib=0 0.02ma 0.04ma 0.06ma 0.08ma 0.10ma 0.12ma 0.14ma 0.16ma 0 10 20 30 40 50 0 1 2 3 4 5 collector emitter voltage vce(v) collector current ic(ma) ta=25?? common emitter transfer 0 10 20 30 40 50 0 0.2 0.4 0.6 0.8 1 base to emitter voltage vbe(v) collector current ic(ma) ta=25?? vce=6v dc forward current gain vs. collector current 1 10 100 1000 10000 0.1 1 10 100 1000 collector current ic(ma) relative value of dc forward current gain hfe ta=25?? vce=6v 100(@ic=1ma) gain band width product vs. emitter current 0 50 100 150 200 250 -0.1 -1 -10 -100 emitter current ie(ma) gain band width product ft(mhz) ta=25?? vce=6v collector output capacitance vs. collector to base voltage 0.1 1 10 100 0.1 1 10 100 collector to base voltage vcb(v) collector output capacitance cob(pf) ta=25?? ie=0 f=1mhz isahaya electronics corporation
marketing division, marketing planning departme nt 6 - 41 tsukuba, isahaya, nagasaki, 854 - 0065 japan keep safety first in your circuit designs! isahaya electronics corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility th at trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropri ate measures such as ( 1) placement of substitutive, auxiliary, ( 2) use of non - farmable material or ( 3) prevention against any malfunct ion or mishap. notes regarding these materials these materials are intended as a reference to our customers in the selection of the isah aya products best suited to the customer?s application; they don't convey any license under any intellectual prop erty rights, or any other rights, belonging isahaya or third party. isahaya electronics corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any product data, diagram s, charts or circuit application examples contained in these materials . all information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, a nd are subject to change by isahaya electronics corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact isahaya electronics corporation or an authorized isahaya products distr ibutor for the latest product information before purchasing product listed herein. isahaya electronics corporation products are not designed or manufactured for use in a device or system that is used under circumstances in which human lif e is potentially at stake. please contact isahaya electronics corporation or an authorized isahaya products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transpor tation, vehicular, medical, aerospace, nuclear, or undersea repeater use. the prior written approval of isahaya electronics corporation is necessary to reprint or reproduce in whole or in part these materials. if these products or technolo gies are subject to the japanese export control restrictions, they must be exported under a license from the japanese government and cannot be imported into a country other than the approved destination. any diversion or re - export contrary to t he export control laws and regulations of japan and/or the country of destination is prohibited. please contact isahaya electronics corporation or authorized isahaya products distributor for further details on these materials or the product s contained therein. jan.2003
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